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Next Generation Spin Torque Memories [electronic resource] / by Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati.

By: Contributor(s): Material type: TextTextSeries: SpringerBriefs in Applied Sciences and TechnologyPublisher: Singapore : Springer Singapore : Imprint: Springer, 2017Description: XVII, 92 p. 64 illus. online resourceContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9789811027208
Subject(s): Additional physical formats: Printed edition:: No titleDDC classification:
  • 620.5 23
Online resources:
Contents:
Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References.
In: Springer eBooksSummary: This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
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Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References.

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.